上海大学材料科学与工程学院电子信息材料系闵嘉华

fengxiaoxiao

闵嘉华（Min Jiahua），男，1961年11月生，上海市人。2007年7月加入中国共产党。
1982年7月毕业于上海科技大学化学与材料科学系半导体物理与化学专业，获工学士学位，2001年11月毕业于上海大学材料学院材料物理与化学专业，获工学硕士学位，2006年7月毕业于上海大学材料学院材料学专业，获工学博士学位。现任上海大学材料学院教授、博士生导师。
近年来，主持国家自然科学基金项目2项，作为骨干参加国家自然科学基金项目5项、省部级科研项目2项。在SCI检索刊物上发表论文30余篇，申请及获得发明专利10余项。
主要从事的研究领域：
材料学专业、微电子学与固体电子学专业、材料物理专业，主要从事半导体材料与器件、II-VI族化合物半导体晶体制备及器件工艺、硅平面器件工艺、半导体纳米材料、半导体材料性能测试、太阳能电池等研究工作。
主讲课程：
化合物半导体（本科生）、微电子器件原理（研究生）。
代表性论文：
[1] Jiahua Min, Jun Chen, Xiaoyan Liang, Jijun Zhang, Dong Wang, Hui Li, Effects of gradient heat treatment on Te-rich CdZnTe crystal, Vacuum 86 (2012) 994-997
[2] Jiahua Min, Xiaoyan Liang, Jun Chen, Dong Wang, Hui Li, Jijun Zhang, Investigation of Te inclusions in CdZnTe crystalline material using Raman spectroscopy and IR techniques, Vacuum 86 (2012) 1003-1006
[3] Jiahua Min, Xiaoyan Liang, Bin Wang, Linjun Wang, Yue Zhao, Weimin Shi and Yiben Xia, The sensitivity and dynamic response of field ionization gas sensor based on ZnO nanorods, Journal of Nanoparticle Research, (2011) 13: 5171-5176
[4] Min, J. H; Wang, B.; Liang, X. Y.; Zhao, Y.; Zhu, Z. H.; Hu, S. Y., Growth of ZnO Nanostructures on Metal-Filled Porous Silicons, Rare Metal Materials and Engineering, 2011, 40, (5), 761-764
[5] Li Hui, Min Jia-Hua, Wang Lin-Jun, Xia Yi-Ben, Zhang Ji-Jun, Ye Bang-Jiao, Influence of free-space volume in ampoule on defects of CdZnTe crystal grown by bridgman method, Journal of Inorganic Materials, 2012, 27(8): 790-794.
[6] Wang Bin, Min Jiahua, Zhao Yue, Sang Wenbin, Wang Changjun, The grain boundary related p -type conductivity in ZnO films prepared by ultrasonic spray pyrolysis, Applied Physics Letters, 2009, 94(19):
[7] Wang Dong, Min Jia-Hua, Liang Xiao-Yan, Sun Xiao-Xiang, Liu Wei-Wei, Li Hui, Zhang Ji-Jun, Wang Lin-Jun, Growth and characterization of Cd1-xZnxTe (x=0.2) crystals by temperature gradient solution growth, Journal of Functional Materials, 2012, 43(10): 1277-1280.
[8] Wang Changjun, Min Jiahua, Zhou Chenying, Liang Xiaoyan, Zhao Yue, Wang Linjun, Xia Yiben, Analysis of In and Al doped high resistivity CdZnTe crystal, Physica Status Solidi C: Current Topics in Solid State Physics. 2010, 7: 1498-1500.
[9] Zhou Chenying, Min Jiahua, Wang Changjun, Liang Xiaoyan, Teng Jianyong, Wang Linjun, Effect of variable crucible dropping rate on solid-liquid interface in CdZnTe crystal growth, Physica Status Solidi C: Current Topics in Solid State Physics. 2010, 7: 1479-1481.
[10] Zhou Chenying, Min Jiahua, Wang Changjun, Liang Xiaoyan, Teng Jianyong, Wang Linjun, Investigation of influence of accelerated rotating wave on solid-liquid interface in CdZnTe ACRT crystal growth, Physica Status Solidi C: Current Topics in Solid State Physics, 2010, 7: 1482-1485.
[11] Liang Xiaoyan, Min Jiahua, Wang Changjun, Sang Wenbin, Gu Ying, Zhao Yue, Zhou Chenying, Optimized process of thermal treatment of Au/CdZnTe contacts, Rare Metal Materials and Engineering, 2009, 38(12): 2085-2088.
[12] Sang Wenbin, Min Jiahua, Zhou Chenying, Gu Ying, Wang Changjun, Qian Yongbiao, Study on CdZnTe crystal growth parameters optimization Lingen Dai, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, October 20, 2008 - October 23, 2008. Beijing, China. 2008, 749-752.
[13] Min Jiahua, Sang Wenbin, Liu Hongtao, Qian Yongbiao, Teng Jianyong, Fan Jianrong, Li Wanwan, Zhang Bin, Jin Wei, Improving the properties of CdZnTe crystals by annealing processes, Rare Metal Materials and Engineering, 2007, 36(3): 471-474.
[14] Chen Jun, Min Jia-Hua, Liang Xiao-Yan, Zhang Ji-Jun, Wang Dong, Li Hui, Investigation on the vacuum carbon coating process on quartz ampoules for CdZnTe crystal growth, Journal of Synthetic Crystals, 2010, 39(5): 1114-1118.
[15] Li Gang, Sang Wen-Bin, Min Jia-Hua, Qian Yong-Biao, Shi Zhu-Bin, Dai Ling-En, Zhao Yue, Study on the defect energy levels of high resisitivity in-doped CdZnTe crystals. Journal of Inorganic Materials, 2008, 23(5): 1049-1053.
[16] Min J. H., Shi Z. B., Qian Y. B., Sang W. B., Zhao H. Y., Teng J. Y., Liu J. S., Simulation of the anode structure for capacitive Frisch grid CdZnTe detectors, NUCLEAR SCIENCE AND TECHNIQUES, 2009, 20(1): 46-50.
[17] Liang X. Y., Min J. H., Chen J., Wang D., Li H., Wang Y., Wang L. J., Zhang J. J., Metal/semiconductor contacts for schottky and photoconductive CdZnTe detector, Physics Procedia. ELSEVIER SCIENCE BV. 2012: 545-550.
[18] Qian Y. B., Sang W. B., Li G., Min J. H., Shi Z. B., Zhou C. Y.. In-Doped CdZnTe Crystal Growth under Controlled Te Partial Pressure, Journal of the Korean Physical Society, 2008, 53(5SIPart 2): 2870-2872.
授权的专利成果
[1] 闵嘉华、陈军、梁小燕、王东、李辉、张继军、王林军，移动碲溶剂熔区法生长碲锌镉晶体的方法及装置， 2012.11.07，中国，ZL 201010201205.8
[2] 闵嘉华、王东、梁小燕、刘伟伟、孙孝翔、李辉、孟利敏、张继军、王林军、郭昀、张涛、滕家琪，碲溶剂溶液法生长碲锌镉晶体的方法，2012.08.29，中国，ZL201110150914.2
[3] 闵嘉华、李辉、梁小燕、刘伟伟、孙孝翔、王东、席韡、张继军、王林军、张涛、滕家琪、郭昀，一种提高碲锌镉晶体性能的方法，2013.04.03，中国，ZL201110151562.2
[4] 闵嘉华 桑文斌 夏 军 钱永彪 滕建勇 樊建荣 陆 玥 周晨莹 胡冬妮, 带有电容栅的共面栅阳极碲锌镉探测器及其制备方法, 2009.05.06，中国，ZL 200710038763.5
联系方式：
E-mail: minjh@shu.edu.cn
Tel.: 86-21-66137127