代表性论文:
1. Strain distributions and their influences on electronic structures of WSe2-MoS2 laterally strained heterojunctions
C. Zhang*, M.-Y. Li, J. Tersoff, Y. Han, Y. Su,L.-J. Li, D. A. Muller and C.-K. Shih
Nature Nanotechnology, in press (2017)
2. Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction
C. Zhang, Y. Chen, J.-K. Huang, X. Wu, Lain-Jong Li, Wang Yao, Jerry Tersoff, Chih-Kang Shih
Nature Communications 7, 10349 (2016).
3. Interlayer Couplings, Moiré Patterns, and 2D Electronic Super-lattices in MoS2/WSe2 Hetero-bilayers
C. Zhang, M.-Y. Li, C.-P. Chuu, Q. Zhang, C. Zeng, Chuanhong Jin, L.-J. Li, M.-Y. Chou and C.-K. Shih
Science Advances 3, e1601459(2017).
4. Determination of Band Alignment in the Single Layer MoS2/WSe2 Heterojunction,
M.-H. Chiu†, C. Zhang†, H.-W. Shiu, C.-P. Chuu, C.-H. Chen, C.-Y. Chang, C.-H. Chen, Mei-Yin Chou, C.-K. Shih and L.-J. Li (†equal contribution)
Nature Communications 6, 7666 (2015).
5. Direct Imaging of the Band Profile in Single Layer MoS2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States and Edge Band Bending,
C. Zhang, A. Johnson, C.-L. Hsu, L.-J. Li, C.-K. Shih
Nano Letters 14, 2443–2447 (2014).
6. Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe2,
C. Zhang, Y. Chen, A. Johnson, M.-Y. Li, L.-J. Li, P. C. Mende, Randall M. Feenstra, and C.-K. Shih
Nano Letters 15, 6494-6500 (2015).
7. Intrinsic Optical Properties and Enhanced Plasmonic Response of Epitaxial Silver
Y. Wu†, C. Zhang†, Y. Zhao, J. Kim, M. Zhang, N. M. Estakhri, X.-X. Liu, G. K. Pribil, A. Alù, C.-K. Shih, X. Li (†equal contribution)
Advanced Materials 26, 6106-6110(2014).
张晨栋课题组利用MBE在SiC外延石墨烯衬底上构建了原子级洁净的单层PTCDA/单层WSe2异质结界面,结合扫描隧道显微镜和第一性原理计算对界面电子结构进行了直接探测和深入研究。研究发现在该异质结界面处存在着显著的PTCDA分子层到WSe2层的层间电荷转移;PTCDA的非占据态和WSe2的导带之间存在很强的轨道杂化行为,因此vdW半导体异质结中广泛采用的Anderson能带排列规则并不适用于该O/T界面;此外,文中确定了异质结为第二类能带排列,价带台阶约1.69 eV,导带台阶约1.57 eV;最后,研究表明PTCDA分子和下层Se格子的局域堆叠角度的不同会影响杂化界面态,使互为90°角的两种分子的本征能量存在偏移。
文章信息:Yanping Guo, Linlu Wu, Jinghao Deng, Linwei Zhou, Wei Jiang, Shuangzan Lu, Da Huo, Jiamin Ji, Yusong Bai, Xiaoyu Lin, Shunping Zhang, Hongxing Xu, Wei Ji* & Chendong Zhang*. Band alignment and interlayer hybridization in monolayer organic/WSe2 heterojunction. Nano Research https://doi.org/10.1007/s12274-021-3648-9.2.
作者: ersan 时间: 2022-10-10 10:53
8月22日,Nano Letters (《纳米快报》)在线发表了物理科学与技术学院张晨栋教授团队有关二维铁电/过渡金属二卤化物异质结(TMD)的最新研究成果。论文题为《Tuning of the valley structures in monolayer In2Se3/WSe2 heterostructures via ferroelectricity》。武汉大学为第一署名单位,物理学院2019级博士生霍达为论文第一作者,武汉大学张晨栋教授和中山大学俞弘毅教授为共同通讯作者。
二维铁电材料的出现使得非易失性铁电功能可被集成到范德华异质结中,为低维量子物态的非易失性电调制提供了可能,如热电、磁性和光电响应等。二维铁电半导体In2Se3/TMD组成的物态杂化体系, 由于易于制备、性能稳定等优点,已在技术应用上展现出优良的前景。但目前为止,实验上对近邻铁电极化引起的电子结构等基础物性调控的理解还比较缺失,基础的量子构效关联未能确定。特别的,外电场的斯塔克效应是调控TMD材料能谷结构的有效手段,但由于对称性保护等原因一直未能在单原子层中观察到。